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ISL95310 датащи(PDF) 4 Page - Renesas Technology Corp |
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ISL95310 датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page ![]() ISL95310 FN8083 Rev 1.00 Page 4 of 9 August 27, 2015 Operating Specifications Over the recommended operating conditions unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS MIN TYP (Note 1) MAX UNIT ICC1 VCC supply current, volatile write/read CS = VIL, U/D = VIL or VIH and INC = 0.4V/2.4V min; tCYC RL, RH, RW not connected 1mA ICC2 VCC supply current, nonvolatile write CS = VIL, U/D = VIL or VIH and INC = 0.4V/2.4V min; tCYC RL, RH, RW not connected 3mA ISB VCC current, standby VCC = +5.5V, 2-wire interface in standby state 5 µA VCC = +3.6V, 2-wire interface in standby state 2 µA IV+ V+ bias current V+ = 13.2V; VCC = +5.5V 1 µA ILkgDig Leakage current, at pins INC, CS, U/D, A0, and A1 pins Voltage at pin from GND to VCC -10 10 µA ILI CS input leakage current VIN = VCC ±1 µA VCC = 3V, CS = 0 60 100 150 µA VCC = 5V, CS = 0 120 200 250 µA IV+ V+ bias current V+ = 13.2V; VCC = +5.5V 1 µA tDCP (Note 13) DCP wiper response time INC falling edge of last bit of DCP data byte to wiper change 1µs Vpor (Note 13) Power-on recall voltage Minimum VCC at which memory recall occurs 1.8 2.6 V VCC Ramp (Note 13) VCC ramp rate 0.2 V/ms tD (Note 13) Power up delay VCC above Vpor, to DCP initial value register recall completed, and 2-wire Interface in standby state 3ms EEPROM SPECS EEPROM endurance 150,000 Cycles EEPROM retention Temperature 75°C 50 Years SERIAL INTERFACE SPECS VIL INC, CS, and U/D -0.3 0.3* VCC V VIH INC, CS, and U/D 0.7* VCC VCC+ 0.3 V Hysteresis (Note 13) INC, CS, and U/D input buffer hysteresis 0.05* VCC V Cpin (Note 13) INC, CS, and U/D pin capacitance 10 pF AC Electrical Specifications VCC = 5V ±10%, TA = Full Operating Temperature Range unless otherwise stated SYMBOL PARAMETER MIN TYP (Note 4) MAX UNIT tCl CS to INC setup 100 ns tlD (Note 13) INC HIGH to U/D change 100 ns tDI (Note 13) U/D to INC setup 1 µs tlL INC LOW period 1 µs tlH INC HIGH period 1 µs tlC INC inactive to CS inactive 1 µs |
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