K4S643233F datasheet(5/8 Pages) SAMSUNG

номер детали	K4S643233F

подробное описание детали	2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

PDF	8 Pages

Scroll/Zoom	100%

производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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K4S643233F-S(D)E/N/I/P

Rev. 1.5 Dec. 2002

CMOS SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25

°C to 85°C for Extended, -40°C to 85°C for Industrial)

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S643233F-S(D)E/I**

4. K4S643233F-S(D)N/P**

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-1H

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

Precharge Standby Current

in power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.5

ICC2 PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.5

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

ICC3 PS

CKE & CLK

≤ VIL(max), tCC = ∞

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating Current

ICC4

IO = 0 mA ,Page burst

Refresh Current

ICC5

tRC

≥ tRC(min)

135

120

Self Refresh Current

ICC6

CKE

≤ 0.2V

-S(D)E/I

-S(D)N/P

0.4

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