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BFP196WN датащи(PDF) 4 Page - Infineon Technologies AG

номер детали BFP196WN
подробное описание детали  Low noise silicon bipolar RF transistor
PDF  19 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP196WN датащи(HTML) 4 Page - Infineon Technologies AG

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2
Thermal characteristics
Table 2
Thermal resistance
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
Junction - soldering point
RthJS
–
115
–
K/W
1)
Figure 1
Absolute maximum power dissipation Ptot vs. Ts
Note:
In the horizontal part of the above curve the junction temperature TJ is lower than TJ,max. In the
declining slope it is TJ = TJ,max. Ptot has to be reduced according to the curve in order not to exceed
TJ,max. It is TJ,max = TS + Ptot * RTHJS.
1
For the definition of RthJS please refer to the application note AN077
BFP196WN
Low noise silicon bipolar RF transistor
Thermal characteristics
Preliminary datasheet
4
Revision 1.0
2017-01-20



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