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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS75R12KT4_B11 датащи(PDF) 2 Page - Infineon Technologies AG |
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FS75R12KT4_B11 датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  2 TechnischeInformation/TechnicalInformation FS75R12KT4_B11 IGBT-Module IGBT-modules preparedby:NK approvedby:RS dateofpublication:2013-11-04 revision:3.0 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C IC nom 75 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 385 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V VCE sat 1,85 2,15 2,25 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 2,40 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 0,57 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 10 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 4,30 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,16 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = ±15 V RGon = 2,2 Ω td on 0,13 0,15 0,15 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 75 A, VCE = 600 V VGE = ±15 V RGon = 2,2 Ω tr 0,02 0,03 0,035 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = ±15 V RGoff = 2,2 Ω td off 0,30 0,38 0,40 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 75 A, VCE = 600 V VGE = ±15 V RGoff = 2,2 Ω tf 0,045 0,08 0,09 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 75 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, di/dt = 1900 A/µs (Tvj = 150°C) RGon = 2,2 Ω Eon 5,90 9,00 10,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 75 A, VCE = 600 V, LS = 25 nH VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) RGoff = 2,2 Ω Eoff 3,90 6,10 6,40 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 270 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 0,39 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,195 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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