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HMC981LP3E датащи(PDF) 14 Page - Analog Devices

номер детали HMC981LP3E
подробное описание детали  ACTIVE BIAS CONTROLLER
PDF  17 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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HMC981LP3E датащи(HTML) 14 Page - Analog Devices

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 14
13
HMC981LP3E
v01.0411
ACTIVE BIAS CONTROLLER
Figure 1. Daisy Chain Operation
Operation Modes
HMC981LP3E can be configured to bias both enhancement and depletion mode external amplifiers. The mode of
operation can be selected by setting two pins (VNEGFB, VGATEFB) as tabulated in Table-2. The connection to the
VNEGIN should be adjusted accordingly.
In order not to bias external amplifier in a wrong region, please make sure that the correct mode of operation is
selected before powering up the HMC981LP3E.
The HMC981LP3E does not allow the internal negative voltage generator to work if an enhancement mode is selected.
Therefore, if VNEGFB is left floating while VGATEFB is grounded, HMC981LP3E will stay in standby mode.
Please note that the external negative voltage should be between -2.5V to -3.5V for HMC981LP3E to operate. If your
application requires negative voltages outside this range please contact Hittite application support.
Table 2. Mode Selection
VNEGFB
VGATEFB
VNEGIN
Description
MODE1
(Depletion/Master Mode)
FLOAT
FLOAT
Connected to
VNEGOUT
Depletion mode transistor. Internal negative voltage generator is
active and generates -2.5V. Sample application schematic given
shown in Fig.2a.
MODE2
(Depletion/Slave Mode)
GND
FLOAT
Connected to
External VSS
Depletion mode transistor. Internal negative voltage generator is
disabled. An external negative voltage less than -2.3V should be
connected to VNEGIN. Sample application schematic given shown
in Fig.2b.
---
FLOAT
GND
N/A
Not allowed. HMC981LP3E stays in standby.
MODE3
(Enhancement Mode)
GND
GND
Connected to
GND
Enhancement mode transistor. Internal negative voltage generator is
disabled. Sample application schematic given shown in Fig.2c.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D



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