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APT15GP60BDF1 датащи(PDF) 5 Page - Advanced Power Technology

номер детали APT15GP60BDF1
подробное описание детали  POWER MOS 7 IGBT
PDF  9 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT15GP60BDF1 датащи(HTML) 5 Page - Advanced Power Technology

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TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
4,000
1,000
500
100
50
10
70
60
50
40
30
20
10
0
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
Cies
Coes
Cres
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULARPULSEDURATION(SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
t
PP
f
EE
TT
P
R θ
=
=
++
+
−
=
+
−
=
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5
1015
20
2530
35
40
45
50
292
100
50
10
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
0.216
0.284
0.00600
0.164
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature



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