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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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EL2125CSZ датащи(PDF) 3 Page - Renesas Technology Corp |
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EL2125CSZ датащи(HTML) 3 Page - Renesas Technology Corp |
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3 / 16 page  EL2125 FN7045 Rev 3.00 Page 3 of 16 May 4, 2007 VN Voltage Noise Spectral Density 10kHz 0.83 nV/ Hz IN Current Noise Spectral Density 10kHz 2.4 pA/ Hz HD2 2nd Harmonic Distortion (Note 3) -74 dBc HD3 3rd Harmonic Distortion -91 dBc NOTES: 1. Measured by moving the supplies from ±4V to ±6V 2. Pulse test only 3. Frequency = 1MHz, VOUT = 2VP-P, into 500 and 5pF load Electrical Specifications VS = ±5V, TA = +25°C, RF = 180, RG = 20 RL = 500 unless otherwise specified. (Continued) PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT Electrical Specifications VS = ±15V, TA = +25°C, RF = 180, RG = 20, RL = 500 unless otherwise specified. PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT DC PERFORMANCE VOS Input Offset Voltage (SO8) 0.6 3 mV Input Offset Voltage (SOT23-5) 3mV TCVOS Offset Voltage Temperature Coefficient 4.9 µV/°C IB Input Bias Current -30 -24 µA IOS Input Bias Current Offset 0.4 2 µA TCIB Input Bias Current Temperature Coefficient 0.08 µA/°C CIN Input Capacitance 2.2 pF AVOL Open Loop Gain 80 87 dB PSRR Power Supply Rejection Ratio (Note 4) 80 97 dB CMRR Common Mode Rejection Ratio at CMIR 75 105 dB CMIR Common Mode Input Range -14.6 13.8 V VOUTH Output Voltage Swing High No load, RF = 1k 13.35 13.5 V VOUTL Output Voltage Swing Low No load, RF = 1k -13.6 -13 V VOUTH2 Output Voltage Swing High RL = 100 11 11.6 V VOUTL2 Output Voltage Swing Low RL = 100 -10.4 -9.8 V IOUT Output Short Circuit Current (Note 5) 120 250 mA IS Supply Current 10.8 12 mA AC PERFORMANCE - RG = 20, CL = 5pF BW -3dB Bandwidth 220 MHz BW ±0.1dB ±0.1dB Bandwidth 23 MHz BW ±1dB ±1dB Bandwidth 63 MHz Peaking Peaking 2.5 dB SR Slew Rate VOUT = 2VP-P, measured at 20% to 80% 180 225 V/µs OS Overshoot, 4VP-P Output Square Wave 0.6 % tS Settling Time to 0.1% of ±1V Pulse 38 ns |
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