FN4325 Rev 1.00

Page 10 of 11

November 3, 2005

HIP6013

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Schottky Selection

Rectifier D2 conducts when the upper MOSFET Q1 is off. The

diode should be a Schottky type for low power losses. The

power dissipation in the Schottky rectifier is approximated by:

In addition to power dissipation, package selection and heatsink

requirements are the main design tradeoffs in choosing the

Schottky rectifier. Since the three factors are interrelated, the

selection process is an iterative procedure. The maximum

junction temperature of the rectifier must remain below the

package thermal resistance specification and the Schottky

power dissipation equation (shown above), the junction

temperature of the rectifier can be estimated. Be sure to use the

available airflow and ambient temperature to determine the

junction temperature rise.

+

-

+12V

HIP6013

GND

UGATE

PHASE

BOOT

VCC

+5V OR LESS

NOTE:

Q1

D2