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HIP6004ECBZ датащи(PDF) 4 Page - Renesas Technology Corp |
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HIP6004ECBZ датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 14 page ![]() HIP6004E FN4997 Rev 3.00 Page 4 of 14 November 10, 2015 Absolute Maximum Ratings Thermal Information Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V Boot voltage, VBOOT - VPHASE. . . . . . . . . . . . . . . . . . . . . . . . .+15V Input, output or I/O voltage . . . . . . . . . . . .GND -0.3V to VCC +0.3V ESD classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2 Operating Conditions Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V 10% Ambient temperature range . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC Thermal resistance (Typical, Note 1) JA (oC/W) SOIC package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 TSSOP package . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Maximum junction temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum storage temperature range . . . . . . . . . . . -65oC to 150oC Maximum lead temperature (soldering 10s) . . . . . . . . . . . . . 300oC (lead tips only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications Recommended operating conditions, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VCC SUPPLY CURRENT Nominal supply ICC UGATE and LGATE open - 5 - mA POWER-ON RESET Rising VCC threshold VOCSET = 4.5V - - 10.4 V Falling VCC threshold VOCSET = 4.5V 8.2 - - V Rising VOCSET threshold -1.26- V OSCILLATOR Free running frequency RT = open 185 200 215 kHz Total variation 6k < RT to GND < 200k -15 - +15 % Ramp amplitude VOSC RT = open - 1.9 - VP-P REFERENCE AND DAC DAC (VID0-VID4) input low voltage -- 0.8V DAC (VID0-VID4) input high voltage 2.0 - - V DACOUT voltage accuracy -1.0 - +1.0 % ERROR AMPLIFIER DC gain -88 - dB Gain-bandwidth product GBWP - 15 - MHz Slew rate SR COMP = 10pF - 6 - V/ s GATE DRIVERS Upper gate source IUGATE VBOOT - VPHASE = 12V, VUGATE = 6V 350 500 - mA Upper gate sink RUGATE ILGATE = 0.3A - 5.5 10 Lower gate source ILGATE VCC = 12V, VLGATE = 6V 300 450 - mA Lower gate sink RLGATE ILGATE = 0.3A - 3.5 6.5 PROTECTION Overvoltage trip (VSEN/DACOUT) - 115 120 % OCSET current source IOCSET VOCSET = 4.5VDC 170 200 230 A OVP sourcing current IOVP VSEN = 5.5V, VOVP = 0V 60 - - mA Soft start current ISS -10 - A POWER GOOD Upper threshold (VSEN/DACOUT) VSEN rising 106 - 111 % Lower threshold (VSEN/DACOUT) VSEN falling 89 - 94 % Hysteresis (VSEN/DACOUT) Upper and lower threshold - 2 - % PGOOD voltage low VPGOOD IPGOOD = -5mA - 0.3 - V |
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