VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC7940

SONET/SDH 3.125Gb/s

Laser Diode Driver with Automatic Power Control

Page 4

G52357-0, Rev 3.2

05/11/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Bare Die Pad Descriptions

Figure 1: Pad Assignments

VSC7940

Pad 8

CLK-

Pad 7

CLK+

Pad 6

VCC1

Pad 5

GND1

Pad 4

VCC1

Pad 3

DATA-

Pad 2

DATA+

Pad 1

VCC1

(Pin 1)

(Pin 2)

(Pin 3)

(Pin 4)

(Pin 6)

(Pin 7)

(Pin 8)

(Pin 9)

(Pin 10)

(Pin 11)

(Pin 12)

(Pin 13)

(Pin 15)

(Pin 14)

(Pin 16)

(Pin 17)

(Pin 32)

(Pin 31)

(Pin 30)

(Pin 29)

(Pin 28)

(Pin 26)

(Pin 27)

(Pin 25)

(Pin 5)

(Pin 18)

(Pin 19)

(Pin 20)

(Pin 21)

(Pin 22)

(Pin 23)

(Pin 24)

Pad 48

GND1

Pad 47

GND2

Pad 46

VCC2

Pad 45

BIASMAX

20

µm

(0.0008")

2233

µm

(0.0879")

1773

µm (0.0698")

75

µm

(0.0030")

Pad 44

MODSET

Pad 43

GND2

Pad 42

APCSET

Pad 41

RESERVED

Pad 40

GND2

Pad 39

PB_GND

Pad 38

GND3

Pad 37

PB_GND

Pad 36

CAPC

Pad 35

VCC3

Pad 34

GND3

Pad 10

GND1

Pad 11

LATCH

Pad 12

ENABLE

Pad 13

DISABLE

Pad 14

GND1

Pad 15

BIASMON

Pad 16

MODMON

Pad 17

FAIL

Pad 18

GND4

Pad 19

PB_GND

Pad 20

APCFILT

Pad 21

GND4

Pad 22

VCC4

Pad 23

BIAS

Pad 9

VCC1

Pad 25

VCC4

Pad 26

DB_OUT+

Pad 27

OUT+

Pad 28

OUT-

Pad 29

DB_OUT-

Pad 30

VCC4

Pad 31

GND4

Pad 32

GND3

Pad 33

MD

Pad 24

PB_GND1

Die Size:

1773

µm x 2233µm (0.0698" x 0.0879")

Die Thickness:

625

µm (0.0246")

Pad Pitch:

115

µm (0.0045")

Pad to Pad Clearance:

20

µm (0.0008")

Pad Passivation Opening: 95

µm x 95µm (0.0037" x 0.0037")

µ