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TAS5142 датащи(PDF) 10 Page - Texas Instruments

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номер детали TAS5142
подробное описание детали  STEREO DIGITAL AMPLIFIER POWER STAGE
PDF  26 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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TAS5142 датащи(HTML) 10 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS
TAS5142
SLES126B – DECEMBER 2004 – REVISED MAY 2005
R
L= 4 Ω, FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions
unless otherwise specified.
TAS5142
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
Internal Voltage Regulator and Current Consumption
Voltage regulator, only used as a
VREG
VDD = 12 V
3
3.3
3.6
V
reference node
Operating, 50% duty cycle
7
17
IVDD
VDD supply current
mA
Idle, reset mode
6
11
50% duty cycle
5
16
IGVDD_X
Gate supply current per half-bridge
mA
Reset mode
0.3
1
50% duty cycle, without output filter or load
15
25
mA
IPVDD_X
Half-bridge idle current
Reset mode, no switching
7
25
µA
Output Stage MOSFETs
TJ = 25°C, includes metallization resistance,
RDSon,LS
Drain-to-source resistance, LS
140
155
m
GVDD = 12 V
TJ = 25°C, includes metallization resistance,
RDSon,HS
Drain-to-source resistance, HS
140
155
m
GVDD = 12 V
I/O Protection
Undervoltage protection limit,
Vuvp,G
9.8
V
GVDD_X
Vuvp,hyst(1)
250
mV
OTW(1)
Overtemperature warning
115
125
135
°C
Temperature drop needed below
OTWHYST(1)
OTW temp. for OTW to be inactive
25
°C
after the OTW event
OTE(1)
Overtemperature error
145
155
165
°C
OTE-
OTE-OTW differential
30
°C
OTWdifferential(1)
A reset event must occur for SD to
OTEHYST(1)
25
°C
be released following an OTE event.
OLPC
Overload protection counter
FPWM = 384 kHz
1.25
ms
Resistor—programmable, high-end,
IOC
Overcurrent limit protection
7.9
9.7
11.4
A
ROCP = 18 kΩ
IOCT
Overcurrent response time
210
ns
ROCP
OC programming resistor range
Resistor tolerance = 5%
18
69
k
Connected when RESET is active to provide
Internal pulldown resistor at the out-
RPD
bootstrap capacitor charge. Not used in SE
2.5
k
put of each half-bridge
mode
Static Digital Specifications
VIH
High-level input voltage
2
V
PWM_A, PWM_B, PWM_C, PWM_D, M1,
M2, M3, RESET_AB, RESET_CD
VIL
Low-level input voltage
0.8
V
Leakage
Input leakage current
–10
10
µA
OTW/SHUTDOWN (SD)
Internal pullup resistance, OTW to
RINT_PU
20
26
32
k
VREG, SD to VREG
Internal pullup resistor
3
3.3
3.6
VOH
High-level output voltage
V
External pullup of 4.7 k
Ω to 5 V
4.5
5
VOL
Low-level output voltage
IO = 4 mA
0.2
0.4
V
FANOUT
Device fanout OTW, SD
No external pullup
30
Devices
(1)
Specified by design
10



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