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STTH2L06RL датащи(PDF) 1 Page - STMicroelectronics

номер детали STTH2L06RL
подробное описание детали  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  8 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH2L06RL датащи(HTML) 1 Page - STMicroelectronics

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Table 1: Main Product Characteristics
IF(AV)
2 A
VRRM
600 V
Tj
175°C
VF (typ)
0.85 V
trr (typ)
60 ns
STTH2L06
HIGH EFFICIENCY ULTRAFAST DIODE
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) RMS forward voltage
7
A
IF(AV)
Average forward current
δ = 0.5
DO-41
Tl = 90°C
2
A
SMA
Tl = 100°C
2
SMB
Tl = 115°C
2
IFSM
Surge non repetitive forward current
DO-41
tp = 10ms
sinusoidal
45
A
SMA / SMB
35
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
SMA
STTH2L06A
SMB
STTH2L06U
DO-41
STTH2L06
K
A
September 2004
REV. 1
FEATURES AND BENEFITS
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
DESCRIPTION
The STTH2L06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
SMPS and base drive transistor circuits.
Packaged in axial, SMA and SMB, this device is
intended for use in high frequency inverters, free
wheeling and polarity protection.
Table 2: Order Codes
Part Number
Marking
STTH2L06
STTH2L06
STTH2L06RL
STTH2L06
Part Number
Marking
STTH2L06A
L6A
STTH2L06U
L6U


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