PSS9012 datasheet(4/9 Pages) PHILIPS

номер детали	PSS9012

подробное описание детали	20 V PNP general purpose transistors

PDF	9 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

Logo

4 / 9 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

20 V PNP general purpose transistors

PSS9012 series

handbook, halfpage

102

103

MLE084

−1

−10

−102

−103

IC (mA)

(MHz)

Fig.2

Transition frequency as a function of

collector current; typical values.

VCE = −6V.

handbook, halfpage

(1)

(3)

(4)

(5)

(6)

(mA)

VCE (V)

−30

−20

−10

−4

−20

−8

−12

−16

MLE085

(7)

(2)

Fig.3

Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −140 µA.

(2) IB = −120 µA.

(3) IB = −100 µA.

(4) IB = −80 µA.

(5) IB = −60 µA.

(6) IB = −40 µA.

(7) IB = −20 µA.

Tamb =25 °C.

handbook, halfpage

200

300

100

MLE082

−10−1

−1

−10

IC (mA)

hFE

−102

−103

(1)

(2)

(3)

Fig.4

DC current gain as a function of collector

current; typical values.

VCE = −1V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

300

100

MLE083

−10−1

−1

−10

IC (mA)

hFE

−102

−103

(1)

(2)

(3)

Fig.5

DC current gain as a function of collector

current; typical values.

VCE = −2V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

PSS9012 датащи(PDF) 4 Page - NXP Semiconductors

PSS9012 датащи(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL