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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HCS8550 датащи(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HCS8550 датащи(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page  HCS8550(PNP) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : S8550 FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Complimentary to HCS8050(NPN) MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=- 100μA, IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=- 100μA, IB=0 -25 V Emitter-Base Breakdown Voltage VEBO IE=- 100μA , IC=0 -5 V Collector Cut-off Current ICBO VCB=-40V , IE=0 -0.1 μA Emitter Cut-off Current IEBO VEB=-5V , IC=0 -0.1 μA DC Current Gain hFE(1) VCE=-1V , IC=-50mA 85 400 hFE(2) VCE=-1V , IC=-500mA 50 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA , IB=-50mA -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA , IB=-50mA -1.2 V Transition Frequency fT VCE=-6V , IC=-20mA f=30MHz 150 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0% CLASSIFICATION OF hFE Rank B C D E Range 80-160 120-200 160-300 300-400 Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -500 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4 |
Аналогичный номер детали - HCS8550 |
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Аналогичное описание - HCS8550 |
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ссылки URL |
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