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LTC7813 датащи(PDF) 22 Page - Linear Technology |
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LTC7813 датащи(HTML) 22 Page - Linear Technology |
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22 / 38 page ![]() LTC3895 22 3895fa For more information www.linear.com/LTC3895 The SS pin also controls the timing of the regulator shutdown (REGSD) feature (as discussed in Regulator ShutdownoftheOperationsection).Iftheapplicationdoes not require the use of the EXTVCC LDO (the EXTVCC pin is grounded), the REGSD feature must be defeated with a pull-up resistor between SS and INTVCC, as shown in Figure 7. Any resistor 330k or smaller between SS and INTVCC defeats the 5μA pull-down current on SS that turns on once SS reaches 2.2V (with the EXTVCC LDO not enabled), preventing SS from discharging to 2.0V and shutting down the regulator. Note the current through this pull-up resistor adds to the internal 10μA SS pull-up current at start-up, causing the total soft-start time to be shorter than what it is calculated without the pull-up resistor. The total soft-start time with the pull-up resistor is approximately: tSS ≈ CSS • 0.8V 10µA + 4.6V RSS ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ where RSS is the value of the resistor between the SS and INTVCC pins. applicaTions inForMaTion Figure 6. Using the SS Pin to Program Soft-Start 3895 F06 LTC3895 SS GND CSS Figure 7. Using the SS Pin to Program Soft-Start with EXTVCC Unused/Grounded to Defeat REGSD 3895 F07 LTC3895 SS GND INTVCC EXTVCC CSS RSS DRVCC Regulators (OPTI-DRIVE) The LTC3895 features three separate low dropout linear regulators (LDO) that can supply power at the DRVCC pin. TheinternalVINLDOusesaninternalP-channelpassdevice between the VINandDRVCCpins.TheinternalEXTVCCLDO usesaninternalP-channelpassdevicebetweentheEXTVCC and DRVCC pins. The NDRV LDO utilizes the NDRV pin to drive the gate of an external N-channel MOSFET acting as a linear regulator with its drain connected to VIN. The NDRV LDO provides an alternative method to supply power to DRVCC from the input supply without dissipating the power inside the LTC3895 IC. It has an internal charge pump that allows NDRV to be driven above the VIN sup- ply, allowing for low dropout performance. The VIN LDO has a slightly lower regulation point than the NDRV LDO, such that all DRVCC current flows through the external N- channel MOSFET (and not through the internal P-channel pass device) once DRVCC reaches regulation. When laying out the PC board, care should be taken to route NDRV away from any switching nodes, especially SW, TG, and BOOST. Coupling to the NDRV node could cause its voltage to collapse and the NDRV LDO to lose regulation. If this occurs, the internal VIN LDO would take over and maintain DRVCC voltage at a slightly lower regulation point. However, internal heating of the IC would become a concern. High frequency noise on the drain of the external NFET could also couple into the NDRV node (through the gate-to-drain capacitance of the NDRV NFET) and adversely affect NDRV regulation. The following are methods that could mitigate this potential issue (refer to Figure 8a). 1. Add local decoupling capacitors right next to the drain of the external NDRV NFET in the PCB layout. 2. Insert a resistor (~100Ω) in series with the gate of the NDRV NFET. 3. Insert a small capacitor (~1nF) between the gate and source of the NDRV NFET. When testing the application circuit, be sure the NDRV voltage does not collapse over the entire input voltage and output current operating range of the buck regulator. |
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