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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT8610AB датащи(PDF) 4 Page - Linear Technology |
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LT8610AB датащи(HTML) 4 Page - Linear Technology |
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4 / 26 page  LT8619/LT8619-5 4 8619f For more information www.linear.com/LT8619 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VEN/UV = 2V unless otherwise noted (Notes 2, 3) Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into device pins are positive; all currents out of device pins are negative. All Voltages are referenced to ground unless otherwise specified. Note 3: The LT8619 is tested under pulse load conditions such that TJ ≈ TA. The LT8619E is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8619I is guaranteed over the full –40°C to 125°C operating junction temperature range. High junction temperatures degrade operating lifetimes. Operating lifetime is derated at junction temperatures greater than 125°C. Note 4: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. PARAMETER CONDITIONS MIN TYP MAX UNITS Switch, Logic and Power Good Top Switch On-Resistance ILOAD = 0.1A 0.45 Ω Bottom Switch On-Resistance ILOAD = 0.1A 0.22 Ω EN/UV Power-On Threshold EN/UV Rising l 0.94 1.0 1.1 V EN/UV Power-On Hysteresis 40 mV EN/UV Shutdown Threshold EN/UV Falling l 0.34 0.56 0.92 V EN/UV Pin Current VEN/UV = 2V –100 100 nA Overvoltage Threshold VFB Rising Wrt. Regulated VFB 3.75 % Positive Power Good Threshold VFB Rising Wrt. Regulated VFB l 5 7.5 10 % Negative Power Good Threshold VFB Falling Wrt. Regulated VFB l –5 –7.5 –10 % Positive Power Good Delay VFB = 0.8V ↑ 0.9V to PG Low VFB = 0.9V ↓ 0.8V to PG High 60 35 µs µs Negative Power Good Delay VFB = 0.8V ↓ 0.7V to PG Low VFB = 0.7V ↑ 0.8V to PG High 60 35 µs µs PG Leakage VPG = 3.3V, Power Good ±100 nA PG VOL IPG = 100µA l 0.01 0.3 V |
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