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MP4031GS датащи(PDF) 18 Page - Monolithic Power Systems |
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MP4031GS датащи(HTML) 18 Page - Monolithic Power Systems |
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18 / 19 page ![]() EV4031-S-00A – TRIAC AND ANALOG DIMMABLE 16W PSR WITH PFC LED DRIVER EV4031-S-00A Rev.1.01 www.MonolithicPower.com 18 11/25/2014 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2014 MPS. All Rights Reserved. APPENDIX RIPPLE SUPPRESSOR (Innovative Proprietary) For Triac dimming LED lighting application, a single stage PFC converter needs large output capacitor to reduce the ripple whose frequency is double of the Grid. And in deep dimming situation, the LED would shimmer caused by the dimming on duty which is not all the same in every line cycle. What’s more, the Grid has noise or inrush which would bring out shimmer even flicker. Figure 6 shows a ripple suppressor, which can shrink the LED current ripple obviously. Figure 6: Ripple Suppressor Principle: Shown in Figure 6, Resister R, capacitor C, and MOSFET M compose the ripple suppressor. Through the RC filter, C gets the mean value of the output voltage VCo to drive the MOSFET M. M works in variable resistance area. C’s voltage VC is steady makes the LEDs voltage is steady, so the LEDs current will be smooth. MOSFET M holds the ripple voltage vCo of the output. Diode D and Zener diode DZ are used to restrain the overshoot at start-up. In the start-up process, through D and DZ, C is charged up quickly to turn on M, so the LED current can be built quickly. When VC rising up to about the steady value, D and DZ turn off, and C combines R as the filter to get the mean voltage drop of VCo. The most important parameter of MOSFET M is the threshold voltage Vth which decides the power loss of the ripple suppressor. Lower Vth is better if the MOSFET can work in variable resistance area. The BV of the MOSFET can be selected as double as VCo and the Continues Drain current level can be selected as decuple as the LEDs’ current at least. About the RC filter, it can be selected by RC LineCycle 50 / f . Diode D can select 1N4148, and the Zener voltage of DZ is as small as possible when guarantee O DDZ C _PP VV 0.5 V . Optional Protection Circuit In large output voltage or large LEDs current application, MOSFET M may be destroyed by over-voltage or over-current when LED+ shorted to LED- at working. Gate-Source (GS) Over-voltage Protection: + + NS DO D DZ CO C DG R RO M RG Figure 7: Gate-Source OVP Circuit Figure 7 shows GS over-voltage protection circuit. Zener diode DG and resistor RG are used to protect MOSFET M from GS over-voltage damaged. When LED+ shorted to LED- at normal operation, the voltage drop on capacitor C is high, and the voltage drop on Gate-Source is the same as capacitor C. The Zener diode DG limits the voltage VGS and RG limits the charging current to protect DG. RG also can limit the current of DZ at the moment when LED+ shorted to LED-. VDG should bigger than Vth. Drain-Source Over-voltage and Over-current Protection As Figure 8 shows, NPN transistor T, resistor RC and RE are set up to protect MOSFET M from over-current damaged when output short occurs at normal operation. When LED+ shorted to LED-, the voltage vDS of MOSFET is equal to the vCo which has a high surge caused by the parasitic parameter. Zener Dioder DDS protects MOSFET |
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