ZXMN6A09K

SEMICO NDUC TORS

ISSUE 3 - JANUARY 2004

2

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

60

V

Gate-source voltage

±20

V

(b)

(b)

(a)

11.2

9.0

7.3

A

Pulsed drain current

(c)

40

A

Continuous source current (body diode)

(b)

10.8

A

Pulsed source current (body diode)

(c)

40

A

(a)

Linear derating factor

4.3

34.4

W

mW/°C

(b)

Linear derating factor

10.1

80.8

W

mW/°C

(d)

Linear derating factor

2.15

17.2

W

mW/°C

Operating and storage temperature range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient

(a)

29

°C/W

Junction to ambient

(b)

12.3

°C/W

Junction to ambient

(d)

58

°C/W

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at t

10 sec.

(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.

(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

THERMAL RESISTANCE