IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP50N20PM

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Terminals: 1 - Gate

2 - Drain

3 - Source

1

2 3

OVERMOLDED TO-220

(IXTP...M)

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

50

A

I

SM

Repetitive, Pulse Width Limited by T

JM

200

A

V

SD

I

1.5

V

t

rr

150

ns

Q

RM

2

C

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

Note 1

12

23

S

C

iss

2720

pF

C

oss

V

490

pF

C

rss

105

pF

t

d(on)

26

ns

t

r

35

ns

t

d(off)

70

ns

t

f

30

ns

Q

g(on)

70

nC

Q

gs

V

17

nC

Q

gd

37

nC

R

thJC

1.66

C/W

R

thCS

0.50

C/W

Resistive Switching Times

V

R