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MP4655 датащи(PDF) 5 Page - Monolithic Power Systems |
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MP4655 датащи(HTML) 5 Page - Monolithic Power Systems |
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5 / 31 page ![]() MP4655–PURE, SINGLE-STAGE, LLC, LED CURRENT AND SYSTEM VOLTAGE CONTROLLER MP4655 Rev 1.0 www.MonolithicPower.com 5 2/2/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 13V, TA = +25°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units VIN Supply VIN supply range 9 35 V Quiescent current IQ PS_ON = 5V, no gate driver 1.6 1.9 mA Shutdown current Ishutdown PS_ON = 1.5V 106 120 μA Standby current ISTB PS_ON = 0V 0.6 0.8 mA Gate Driver GL, GR (LLC Power Stage) Gate pull-down resistance RGD Igate = 20mA 2 Ω Gate pull-up resistance RGU Igate = 20mA 8 Ω Output source current ISOURCE With 1nF load 0.5 (5) A Output sink current ISINK With 1nF load 1 (5) A Dead time tdead 400 600 800 ns Gate Driver Supply Voltage (VCC) IVCC = 0mA 11.5 12.5 13.5 V IVCC = 30mA 11.3 12.3 13.3 V Voltage VVCC IVCC = 50mA 11.2 12.2 13.2 V Voltage dropout IVCC = 50mA, VIN = 10V 0.53 V VCC UVLO threshold VTH_UVLO_VCC VCC rising 7.2 7.74 8.2 V VCC UVLO hysteresis VTH_VCC_HYST 1.8 2.05 2.3 V Gate Driver (GATEN, for Extra MOSFET on Vsystem) GATEN pull-down resistance RGD Igate = 20mA 2.5 Ω GATEN pull-up resistance RGU Igate = 20mA 9 Ω Output source current ISOURCE_GATEN With 1nF load 0.5 (5) A Output sink current ISINK_GATEN With 1nF load 1 (5) A GATEN Supply Voltage (VDR_DN) Charge pump pull-up resistor 13 Ω Charge pump pull-down resistor 4 Ω Charge pump frequency fchargepump 455 kHz VDR_DN upper threshold to stop charge pump in standby mode Vth_upper_STB Detection circuit, very small leakage VCC - 2.5 V VCC - 5.5 > 5V VCC - 5.5 VDR_DN valley threshold to recover charge pump in standby mode Vth_valley_STB VCC - 5.5 < 5V 5 V Leakage current from SOURCE Ilkg_SOURCE VSOURCE = 24V, charge pump disabled 0.2 μA |
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