Philips Semiconductors

PI4884

TrenchMOS™ logic level FET

Product data

Rev. 02 — 12 April 2002

7 of 12

9397 750 09583

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

03aa33

0

0.5

1

1.5

2

2.5

-60

0

60

120

180

Tj (

VGS(th)

(V)

max

typ

min

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

01

23

VGS (V)

ID

(A)

max

typ

min

Ciss

Coss

Crss

102

103

104

C

(pF)

1

10

102

10-1

VDS (V)

003aaa165

VSD (V)

IS

(A)

1

20

4

8

12

16

0

25 οC

0.4

0.6

0.8

150 οC

003aaa166