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MP5512 датащи(PDF) 13 Page - Monolithic Power Systems

номер детали MP5512
подробное описание детали  18V, 4.5A, High-Efficiency Energy Storage and Management Unit for SSD Applications
PDF  22 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP5512 датащи(HTML) 13 Page - Monolithic Power Systems

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MP5512 – 18V, 4.5A ENERGY STORAGE AND MANAGEMENT UNIT
MP5512 Rev. 1.1
www.MonolithicPower.com
13
4/27/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
OPERATION
The MP5512 is an energy storage and
management unit in a 4mm×5mm 28-pin QFN
package. It provides a compact and efficient
energy management solution for typical solid-
state–drive or hard-disk drive applications.
MPS’ patented lossless-energy storage and
release-management
circuits
use
a
bi-
directional buck/boost converter to achieve
optimal energy transfer and provide a cost-
effective energy-storage solution.
MP5512’s
built-in
boost-mode
converter
charges the storage bulk capacitor to a
programmed voltage when the system is
powered up. In case of an input power failure,
MP5512 flags the power failure, disconnects
the input power and transfers the energy from
the storage capacitor to the bus capacitor via
the built-in buck mode converter. This supports
SSD system data backup. The buck converter
works in 100% duty-cycle operation to fully
deplete the stored energy.
Start-Up
When the VIN power and enable signal are
higher than their UVLO, MP5512 starts up with
the programmed power-on-reset delay time.
Initially, the hot-swap MOSFET from VIN to VB
is on and the bus capacitor is charged from 0 to
VIN under dv/dt control.
VIN
EN=ENCH
Storage-Voltage
Power-On-Reset Delay Time
Target storage voltage
BUS Voltage
Charge Up VB with dv/dt Control
Boost for Storage
DVDT
VPFI
Boost-Delay Time
Pre-Charge
Figure 2: Charging Process
When DET voltage is higher than 1.02×VDET-REF,
PFI is set to high to indicate the power condition.
If PFI is high and dv/dt voltage is saturated, the
charge circuit is enabled to charge storage
capacitors on STRG (after about 1.8ms delay
time). The storage voltage is charged with
450mA trickle current during the pre-charge
period. Once the storage voltage is close to VB
voltage, the boost-switching circuit initiates and
the storage voltage is boosted to the target
voltage (see Figure 2).
Storage Voltage
After the start-up period, the internal boost
converter automatically regulates the storage
voltage to the set value. The MP5512 uses
burst mode to minimize the converter’s power
loss. When the storage voltage drops below the
set voltage, burst mode initiates and charges
the storage capacitor. During the burst period,
the current limit and the low-side MOSFET
control the boost. When the power MOSFET
turns on, the inductor current increases until it
reaches its current limit. After hitting the current
limit, the power MOSFET turns off for the set
minimum off time. If the feedback voltage
remains below the 0.8V internal reference at
the end of the minimum off time, the power
MOSFET turns on again. Otherwise, the
MP5512 waits until the voltage drops below the
reference threshold before turning on. In boost
mode, the high-side MOSFET won’t turn on and
the inductor current conducts through the body-
diode of HS-FET.
The boost-current limit is programmed by the
ICH resistor. The programmed boost-switching
current limit can be estimated with:
7
10
)
(
35
)
(
L
V
k
R
A
I
IN
ICH
CH
Where RICH is the resistor connected to the ICH
and L is the boost inductor.
If the ICH is floating, the boost-peak current
limit is about 960mA (for typical 12V input and
10uH inductor applications).
MP5512 has over-voltage protection for STRG
voltage. If the feedback voltage of VSTRG on
FBS is over 1.1 x VFBS-REF, MP5512 shuts down
the
low-side
MOSFET



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