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MP5512 датащи(PDF) 13 Page - Monolithic Power Systems |
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MP5512 датащи(HTML) 13 Page - Monolithic Power Systems |
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13 / 22 page ![]() MP5512 – 18V, 4.5A ENERGY STORAGE AND MANAGEMENT UNIT MP5512 Rev. 1.1 www.MonolithicPower.com 13 4/27/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. OPERATION The MP5512 is an energy storage and management unit in a 4mm×5mm 28-pin QFN package. It provides a compact and efficient energy management solution for typical solid- state–drive or hard-disk drive applications. MPS’ patented lossless-energy storage and release-management circuits use a bi- directional buck/boost converter to achieve optimal energy transfer and provide a cost- effective energy-storage solution. MP5512’s built-in boost-mode converter charges the storage bulk capacitor to a programmed voltage when the system is powered up. In case of an input power failure, MP5512 flags the power failure, disconnects the input power and transfers the energy from the storage capacitor to the bus capacitor via the built-in buck mode converter. This supports SSD system data backup. The buck converter works in 100% duty-cycle operation to fully deplete the stored energy. Start-Up When the VIN power and enable signal are higher than their UVLO, MP5512 starts up with the programmed power-on-reset delay time. Initially, the hot-swap MOSFET from VIN to VB is on and the bus capacitor is charged from 0 to VIN under dv/dt control. VIN EN=ENCH Storage-Voltage Power-On-Reset Delay Time Target storage voltage BUS Voltage Charge Up VB with dv/dt Control Boost for Storage DVDT VPFI Boost-Delay Time Pre-Charge Figure 2: Charging Process When DET voltage is higher than 1.02×VDET-REF, PFI is set to high to indicate the power condition. If PFI is high and dv/dt voltage is saturated, the charge circuit is enabled to charge storage capacitors on STRG (after about 1.8ms delay time). The storage voltage is charged with 450mA trickle current during the pre-charge period. Once the storage voltage is close to VB voltage, the boost-switching circuit initiates and the storage voltage is boosted to the target voltage (see Figure 2). Storage Voltage After the start-up period, the internal boost converter automatically regulates the storage voltage to the set value. The MP5512 uses burst mode to minimize the converter’s power loss. When the storage voltage drops below the set voltage, burst mode initiates and charges the storage capacitor. During the burst period, the current limit and the low-side MOSFET control the boost. When the power MOSFET turns on, the inductor current increases until it reaches its current limit. After hitting the current limit, the power MOSFET turns off for the set minimum off time. If the feedback voltage remains below the 0.8V internal reference at the end of the minimum off time, the power MOSFET turns on again. Otherwise, the MP5512 waits until the voltage drops below the reference threshold before turning on. In boost mode, the high-side MOSFET won’t turn on and the inductor current conducts through the body- diode of HS-FET. The boost-current limit is programmed by the ICH resistor. The programmed boost-switching current limit can be estimated with: 7 10 ) ( 35 ) ( L V k R A I IN ICH CH Where RICH is the resistor connected to the ICH and L is the boost inductor. If the ICH is floating, the boost-peak current limit is about 960mA (for typical 12V input and 10uH inductor applications). MP5512 has over-voltage protection for STRG voltage. If the feedback voltage of VSTRG on FBS is over 1.1 x VFBS-REF, MP5512 shuts down the low-side MOSFET |
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