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MP5507EGRG датащи(PDF) 9 Page - Monolithic Power Systems

номер детали MP5507EGRG
подробное описание детали  7V, 3A, High-Efficiency, Energy Management IC for Power Backup
PDF  18 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP5507EGRG датащи(HTML) 9 Page - Monolithic Power Systems

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MP5507E
– 7V, 3A, ENERGY STORAGE AND MANAGEMENT UNIT
MP5507E Rev. 1.0
www.MonolithicPower.com
9
6/29/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
PIN FUNCTIONS
QFN-16 Pin #
Name
Description
1
DVDT
VB voltage slew-rate control. Connect a capacitor from DVDT to AGND to
program the VB charge-up slew rate. Leave DVDT floating for the default soft-start
time (around 0.8ms from 0V to 5V).
2
ILIM
Input current limit setting. Connect a resistor between ILIM and AGND to adjust
the DC limit from VIN to VB. ILIM cannot be left floating. Pull ILIM higher than 1V to
turn off the VIN-to-VB MOSFET. Do not pull ILIM up to a voltage source higher than
the maximum of VIN and VB.
3
PGB
VB power good indicator. PGB is an open-drain output. PGB goes high if the FBB
voltage exceeds 1.03xVFBB (typically 0.813V). PGB goes low if the FBB voltage
drops below 1.0xVFBB (0.79V).
4
DISC
On/off control for the VIN-to-VB isolation FET. When DISC is pulled down, the
VIN-to-VB isolation FET is turned off. When DISC is pulled high, the VIN-to-VB
isolation FET is turned on. It is recommended to pull DISC up to VIN through a 100k
resistor for automatic start-up.
5
ENCH
On/off control for the charge/release circuitry. When ENCH is pulled down, the
charge/release circuitry is disabled. ENCH must be kept high to achieve energy
release.
6
PGND
Power ground.
7
SW
Switch output for the charge/release circuitry. Connect a small inductor between
SW and VBO.
8
STRG
Storage voltage. Connect the appropriate storage capacitors for energy storage
and release operation.
9
BST
Bootstrap for the charge/release circuitry. The internal bidirectional switcher
requires a bootstrap capacitor (typically 100nF) from BST to SW to supply high-side
switch-driver voltage during release.
10
CST
High-side switch driving voltage storage. CST is charged by the storage power
when the storage voltage is high and supports driver voltage when the storage
voltage drops close to the VB regulated voltage.
11
AGND
IC signal ground.
12
FBB
Bus voltage feedback sense. FBB sets the bus release voltage.
13
FBS
Storage voltage feedback sense. FBS sets the storage voltage.
14
VBO
Source of internal isolation FET. Connect the inductor between SW and VBO for
boost and buck operation.
15
VB
Bus voltage. A 22
μF to 47μF ceramic capacitor is required as close to VB as
possible.
16
VIN
Input supply voltage. The MP5507E operates from an unregulated 2.7V to 7V
input. Place a ceramic capacitor 0.1µF or larger as close to VIN as possible. A TVS
diode at the input is necessary if the VIN voltage spike is high. Refer to the
Selecting the Input Capacitor and TVS section on page 14 for additional details.



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