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MP5507EGRG датащи(PDF) 9 Page - Monolithic Power Systems |
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MP5507EGRG датащи(HTML) 9 Page - Monolithic Power Systems |
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9 / 18 page ![]() MP5507E – 7V, 3A, ENERGY STORAGE AND MANAGEMENT UNIT MP5507E Rev. 1.0 www.MonolithicPower.com 9 6/29/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. PIN FUNCTIONS QFN-16 Pin # Name Description 1 DVDT VB voltage slew-rate control. Connect a capacitor from DVDT to AGND to program the VB charge-up slew rate. Leave DVDT floating for the default soft-start time (around 0.8ms from 0V to 5V). 2 ILIM Input current limit setting. Connect a resistor between ILIM and AGND to adjust the DC limit from VIN to VB. ILIM cannot be left floating. Pull ILIM higher than 1V to turn off the VIN-to-VB MOSFET. Do not pull ILIM up to a voltage source higher than the maximum of VIN and VB. 3 PGB VB power good indicator. PGB is an open-drain output. PGB goes high if the FBB voltage exceeds 1.03xVFBB (typically 0.813V). PGB goes low if the FBB voltage drops below 1.0xVFBB (0.79V). 4 DISC On/off control for the VIN-to-VB isolation FET. When DISC is pulled down, the VIN-to-VB isolation FET is turned off. When DISC is pulled high, the VIN-to-VB isolation FET is turned on. It is recommended to pull DISC up to VIN through a 100k resistor for automatic start-up. 5 ENCH On/off control for the charge/release circuitry. When ENCH is pulled down, the charge/release circuitry is disabled. ENCH must be kept high to achieve energy release. 6 PGND Power ground. 7 SW Switch output for the charge/release circuitry. Connect a small inductor between SW and VBO. 8 STRG Storage voltage. Connect the appropriate storage capacitors for energy storage and release operation. 9 BST Bootstrap for the charge/release circuitry. The internal bidirectional switcher requires a bootstrap capacitor (typically 100nF) from BST to SW to supply high-side switch-driver voltage during release. 10 CST High-side switch driving voltage storage. CST is charged by the storage power when the storage voltage is high and supports driver voltage when the storage voltage drops close to the VB regulated voltage. 11 AGND IC signal ground. 12 FBB Bus voltage feedback sense. FBB sets the bus release voltage. 13 FBS Storage voltage feedback sense. FBS sets the storage voltage. 14 VBO Source of internal isolation FET. Connect the inductor between SW and VBO for boost and buck operation. 15 VB Bus voltage. A 22 μF to 47μF ceramic capacitor is required as close to VB as possible. 16 VIN Input supply voltage. The MP5507E operates from an unregulated 2.7V to 7V input. Place a ceramic capacitor 0.1µF or larger as close to VIN as possible. A TVS diode at the input is necessary if the VIN voltage spike is high. Refer to the Selecting the Input Capacitor and TVS section on page 14 for additional details. |
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