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RN2007 датащи(PDF) 2 Page - Toshiba Semiconductor |
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RN2007 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() RN2007 ~RN2009 2001-06-07 2 Electrical Characteristics (Ta = 25 °°°°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO VCB = −50V, IE = 0 ― ― −100 Collector cut-off current ICEO ― VCE = −50V, IB = 0 ― ― −500 nA RN2007 VEB = −6V, IC = 0 −0.081 ― −0.15 RN2008 VEB = −7V, IC = 0 −0.078 ― −0.145 Emitter cut-off current RN2009 IEBO ― VEB = −15V, IC = 0 −0.167 ― −0.311 mA RN2007 80 ― ― RN2008 80 ― ― DC current gain RN2009 hFE ― VCE = −5V, IC = −10mA 70 ― ― Collector-emitter saturation voltage VCE (sat) ― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V RN2007 −0.7 ― −1.8 RN2008 −1.0 ― −2.6 Input voltage (ON) RN2009 VI (ON) ― VCE = −0.2V, IC = −5mA −2.2 ― −5.8 V RN2007 −0.5 ― −1.0 RN2008 −0.6 ― −1.16 Input voltage (OFF) RN2009 VI (OFF) ― VCE = −5V, IC = −0.1mA −1.5 ― −2.6 V Transition frequency fT ― VCE = −10V, IC = −5mA ― 200 ― MHz Collector Output capacitance Cob ― VCB = −10V, IE = 0, f = 1MHz ― 3 6 pF RN2007 7 10 13 RN2008 15.4 22 28.6 Input resistor RN2009 R1 ― 32.9 47 61.1 kΩ RN2007 0.191 0.213 0.232 RN2008 0.421 0.468 0.515 Resistor ratio RN2009 R1/R2 ― 1.92 2.14 2.35 |
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