ZXTP56020FDBQ

Datasheet number: DS38567 Rev.1 - 2

2 of 7

www.diodes.com

April 2017

© Diodes Incorporated

ZXTP56020FDBQ

Absolute Maximum Ratings

C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-20

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-2

A

Peak Pulse Collector Current

-3

A

Base Current

-300

mA

Peak Base Current

-1

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Notes 6 & 8)

405

mW

(Notes 6 & 9)

510

(Notes 7 & 8)

1650

(Notes 7 & 9)

2470

Thermal Resistance, Junction to Ambient

(Notes 6 & 8)

308

°C/W



(Notes 6 & 9)

245

(Notes 7 & 8)

76

(Notes 7 & 9)

51

Thermal Resistance, Junction to Lead

(Note 10)

18

°C/W



Operating and Storage Temperature Range

—

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge

– Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge

– Machine Model

ESD MM

400

V



C

Notes:

6. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is

measured under still air conditions whilst operating in a steady-state.

7. Same as note (6), except the device is mounted with the collector pad on 28mm x 28mm (8cm

8. For a dual device with one active die.

9. For dual device with 2 active die running at equal power.

10. Thermal resistance from junction to solder-point (on the exposed collector pads).

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.