MMST3906 datasheet(3/6 Pages) DIODES

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MMST3906

Document number: DS30079 Rev. 10 - 2

3 of 6

www.diodes.com

April 2016

MMST3906

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage

BVCBO

-40



IC = -10µA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO

-40



IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-5



IE = -10µA, IC = 0

Collector Cutoff Current

ICEX



-50

VCE = -30V, VEB(OFF) = -3V

Base Cutoff Current

IBL



-50

VCE = -30V, VEB(OFF) = -3V

ON CHARACTERISTICS (Note 7)

DC Current Gain

hFE

100



300





IC = -100µA, VCE = -1V

IC = -1mA, VCE = -1V

IC = -10mA, VCE = -1V

IC = -50mA, VCE = -1V

IC = -100mA, VCE = -1V

Collector-Emitter Saturation Voltage

VCE(sat)



-0.20

-0.30

IC = -10mA, IB = -1mA

IC = -50mA, IB = -5mA

Base-Emitter Saturation Voltage

VBE(sat)

-0.65



-0.85

-0.95

IC = -10mA, IB = -1mA

IC = -50mA, IB = -5mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

COBO



4.5

VCB = -5V, f = 1.0MHz, IE = 0

Input Capacitance

CIBO



VEB = -0.5V, f = 1.0MHz, IC = 0

Input Impedance

hIE

Ω

VCE = 1V, IC = 10mA,

f = 1kHz

Voltage Feedback Ratio

hRE

0.1

x 10

-4

Small Signal Current Gain

HFE

100

400



Output Admittance

hOE

S

Current Gain-Bandwidth Product

300



MHz

VCE = -20V, IC = -10mA,

f = 100MHz

Noise Figure





VCE = -5V, IC = -100µA,

RS = 1kΩ f = 1kHz

SWITCHING CHARACTERISTICS

Delay Time



VCC = -3V, IC = -10mA,

IB1 = -1mA, VBE(off) = 0.5V

Rise Time



Storage Time



225

VCC = -3V, IC = -10mA,

IB1 = IB2 = -1mA

Fall Time



Note:

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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