700-2400 MHz 2W High Linearity 5V 2-Stage Power Amplifier

BMT332

1

Rev. E

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2018 BeRex

The BMT332 is a high dynamic range two-

stage power amplifier housed in RoHS com-

pliant 20 pin, 5x5mm QFN package. The

BMT332 uses a high reliability InGaP/GaAs

HBT process technology. The BMT332 is de-

signed for use where high linearity and gain

is required. The BMT332 is able to deliver

over 23 dBm output power from 700 to

2400MHz while maintaining superior ACLR

performance with a few external matching

components. All devices are 100% RF/DC

screened.

Product Description

Device Features

system.

Typical Performance

1

Parameter

Frequency

Unit

1850

1960

2140

2350

MHz

1750

850

Gain

27.3

26.7

26.0

24.0

dB

28.0

33.5

S11

-30.0

-26.0

-17.0

-17.0

dB

-30.0

-18.0

S22

-11.5

-12.0

-11.0

-12.5

dB

-11.5

-14.5

OIP3

2

49.0

49.0

47.5

47.5

dBm

50.0

50.0

P1dB

33.1

33.1

33.2

33.1

dBm

33.2

33.6

LTE 10M ACLR

23.5

23.2

23.8

23.2

dBm

23.4

23.4

WCDMA ACLR

23.7

23.5

24.0

23.5

dBm

23.7

23.5

Noise Figure

5.6

5.5

5.5

5.3

dB

5.6

7.0

Min.

Typical

Max.

Unit

Bandwidth

700

2400

MHz

33

mA

680

mA

5.0

V

7.9

°C/W

Application Circuits

*external matching circuit: refer to the page 4 to 19.

*ACLR Channel Power measured at -50dBc.

- LTE set-up: 3GPP LTE, FDD E-TM3.1, 10MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.

- WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.

• Base station /Repeaters Infrastructure

• Commercial/Industrial/Military wireless system

• LTE / WCDMA /CDMA Wireless Infrastructure

Applications

Absolute Maximum Ratings

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+200

Operating Voltage

V

+6

Supply Current

mA

2000

Input RF Power

dBm

23

*Operation of this device above any of these parameters may result in permanent damage.