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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MP8714 датащи(PDF) 4 Page - Monolithic Power Systems |
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MP8714 датащи(HTML) 4 Page - Monolithic Power Systems |
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4 / 20 page  MP8714 – 17V, 10A, SYNCHRONOUS, STEP-DOWN CONVERTER MP8714 Rev.1.0 www.MonolithicPower.com 4 12/27/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 12V, TJ = -40°C to 125°C (7), unless otherwise noted. Typical value is based on the average value when TJ = 25°C. Parameter Symbol Condition Min Typ Max Units Supply current (shutdown) IIN VEN = 0V 9 13 μA Supply current (quiescent) IQ VEN = 2V, no switching 560 800 μA HS switch on resistance HSRDS-ON VBST-SW = 5V 26 mΩ LS switch on resistance LSRDS-ON VCC = 5V 11 mΩ Switch leakage SWLKG VEN = 0V, VSW = 12V or 0V, TJ = 25°C 1 μA High-side current limit (8) ILIMIT H Under 40% duty cycle 11.7 14 A Oscillator frequency fSW TJ = 25°C 400 500 570 kHz TJ = -40°C to 125°C 350 600 Foldback frequency fVOUT VFB = 150mV 0.5 fSW SYNC frequency range fSYNC 200 2000 kHz Maximum duty cycle DMAX VFB = 500mV, fS = 500kHz 93 95 % Minimum on time (8) tON MIN 40 ns FB voltage VFB TJ = 25°C 594 600 606 mV TJ = -40°C to 85°C (8) 588 612 FB current IFB VFB = 620mV 10 50 nA EN/SYNC pull-up current IEN_PU VEN = 0V, TJ = 25°C 4.3 6.2 7.5 μA VEN = 0V, TJ = -40°C to 125°C 3.2 8 EN/SYNC rising threshold VEN_Rise TJ = 25°C 1.27 1.38 1.48 V TJ = -40°C to 125°C 1.25 1.5 EN/SYNC hysteresis VEN_HYS TJ = 25°C 100 150 200 mV TJ = -40°C to 125°C 80 220 EN/SYNC turn-off delay ENtd-off 10 μs VIN under-voltage lockout threshold rising INUVVth TJ = 25°C 4.03 4.16 4.29 V TJ = -40°C to 125°C 4 4.32 VIN under-voltage lockout threshold hysteresis INUVHYS 510 610 700 mV Power good UV threshold rising PGVth-Hi TJ = 25°C 0.85 0.9 0.94 VOUT TJ = -40°C to 125°C 0.84 0.95 Power good UV threshold falling PGVth-Lo TJ = 25°C 0.64 0.7 0.73 VOUT TJ = -40°C to 125°C 0.63 0.74 Power good deglitch time PGTd 100 160 μs |
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