IRVRM2 datasheet(5/8 Pages) IRF

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Q1 MOSFET Replacement

It would be very rare for any design to

operate at 12.7A continuous output. All three

MOSFET options given in Table 4 will

operate at 12.7A continuous reliably. All

three, however, will exceed the Intel

recommended 115°C maximum junction

temperature.

Perfomance using MOSFET replacement

Figures 9 thru 11 show that in most practical

cases the less expensive IRL3302S would be

the device of choice. Test conditions shown

on Figure 8.

Inductor Specifications

Assembly Options

Inductor Drawing

The specified inductors IR001 and IR002

can be purchased, assembled and tested (see

BOM).

IRVRM2

A more useful comparison is using the Intel

specified typical current on a continuous

basis, and adding higher current demand on

a pulsed basis. Figure 8 shows typical

waveforms and junction temperature

excursions. For a given “t1” pulse width

and “d” duty factor, there is an “I1” current

which will cause Q1 to reach the Intel

recommended 115°C maximum.

Eliminate L2

Inductor L2 may be eliminated if your design

does not require meeting the Intel

recommended input di/dt specification, or if

your design has additional external

inductance. Figures 21, 22, 23, 25 shows the

input di/dt both with and without L2.

Rectifier

International

Fig 8. Typical load current and T

j waveform

Fig 6. IR001

Fig 7. IR002

Fig 9.

I1 current boundary @ Tj

≤≤≤≤≤ 115°C (IRL3302S)

Fig 10.

I1 current boundary @ T

j ≤

≤≤≤≤ 115°C ( IRL3202S)

Fig 11.

I1 current boundary @ Tj

≤≤≤≤≤ 115°C ( IRL3102S)

Table 4

Continuous current boundary @ T

j ≤

≤≤≤≤ 115°C

CURRENT

IRVRM2a

IRL3102S

11.92A

IRVRM2b

IRL3202S

11.66A

IRVRM2c

IRL3302S

11.48A

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