SFH3100F datasheet(2/9 Pages) OSRAM

номер детали	SFH3100F

подробное описание детали	Silicon NPN Phototransistor with Daylight - Cutoff Filter Version 1.5

PDF	9 Pages

Scroll/Zoom	100%

производитель	OSRAM [OSRAM GmbH]

домашняя страница	http://www.osram.com

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2 / 9 page

2016-01-04

Version 1.5

SFH 3100 F

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operating and storage temperature range

op; Tstg

-40 ... 85

°C

Collector-emitter voltage

Collector current

Collector surge current

(τ < 10 µs)

100

Emitter-collector voltage

VEC

Total Power dissipation

Ptot

150

Thermal resistance junction - ambient

RthJA

280

K/W

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

2000

Parameter

Symbol

Values

Unit

Wavelength of max. sensitivity

(typ)

S max

920

Spectral range of sensitivity

(typ)

10%

(typ) 850

... 1100

Radiant sensitive area

(typ)

0.11

Dimensions of chip area

(typ)

L x W

(typ) 0.55 x

0.55

mm x

Half angle

(typ)

± 14

Capacitance

CE = 0 V, f = 1 MHz, E = 0)

(typ)

CCE

7.5

Capacitance

CE = 5 V, f = 1 MHz, E = 0)

(typ)

Photocurrent

(λ = 950 nm, Ee = 0.5 mW/cm

2, V

CE = 5 V)

PCE

≥ 0.4

µA

Dark current

(VCE = 20 V, E = 0)

(typ (max)) ICE0

1 (≤ 50)

Rise and fall time

C = 1 mA, VCC = 5 V, RL = 1 kΩ)

(typ)

tr, tf

7 , 9

µs

Collector-emitter saturation voltage

(Threefold saturated)

(typ (max)) V

CEsat

140 (≤ 400)

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