VS-ST230S...VPbF Series

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Vishay Semiconductors

Revision: 28-Sep-17

3

Document Number: 96113

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum peak gate power

10.0

W

Maximum average gate power

2.0

Maximum peak positive gate current

3.0

A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

5.0

DC gate current required to trigger

Maximum required gate trigger/

current/voltage

are

the

lowest

value which will trigger all units 12

V anode to cathode applied

180

-

90

150

mA

40

-

DC gate voltage required to trigger

2.9

-

V

1.8

3.0

1.2

-

DC gate current not to trigger

Maximum gate current/voltage not

to trigger is the maximum value

which will not trigger any unit with

applied

10

mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction



temperature range

-40 to 125

°C

Maximum storage temperature range

-40 to 150

Maximum thermal resistance,



junction to case

DC operation

0.10

K/W

Maximum thermal resistance,



case to heatsink

Mounting surface, smooth, flat and greased

0.04

Mounting torque, ± 10 %

Non-lubricated threads

31

(275)

N · m

(lbf

in)

Lubricated threads

24.5

(210)

Approximate weight

280

g

Case style

See dimensions - link at the end of datasheet

TO-93 (TO-209AB)

R

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

0.016

0.012

K/W

120°

0.019

0.020

90°

0.025

0.027

60°

0.036

0.037

30°

0.060

0.060