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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LP28501 датащи(PDF) 4 Page - Lowpower Semiconductor inc |
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LP28501 датащи(HTML) 4 Page - Lowpower Semiconductor inc |
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4 / 10 page  LP28501-02 Mar.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 10 Preliminary Datasheet LP28501 Electrical Characteristics (The specifications which apply over the full operating temperature range, otherwise specifications are at TA=25℃, VBUS=5V, unless otherwise noted.) Parameter Test Conditions Measured Min Typ Max Units VIN Input Voltage VBUS 4.4 14 V VIN Port Protection Threshold VBUS Rising UVLO 4.15 4.25 4.35 V VBUS Falling 3.95 4.05 4.15 V Input Voltage Regulation Reference VREG 2.3 2.4 2.5 V Minimum Output Voltage Set for VSYS SYSSE=float, VBAT=2V 3.3 V SYSSE=high, VBAT=2V 3.5 V SYSSE=low, VBAT=2V 3.0 V VDDP/VDDA 5 V Power Path Management VDC Power by USB/Adapter MOSFET RDSON 1A Current Load R(VBUS,VDC) 50 mΩ Switch Between VSYS and VBAT VBAT=4.2V, VBUS Absent, IBAT=3A R(VSYS, VBAT) - 40 mΩ Quiescent Currents VIN Current VBUS=4V IBUS 80 μA Battery Discharge Current in Standby Mode VBAT=4.2V IBAT 15 µA Charger Controller Trickle Charge Condition VBAT<1.4V VISET 0.04 V 1.4V<VBAT<VTRICKL 0.2 V VBAT voltage VB=float, RISET=1K,IBAT=100mA 4.158 4.2 4.242 V VB=high, RISET =1K, IBAT=100mA 4.3 V VB=low, RISET=1K, IBAT=100mA 4.35 V Charge Current in CC Mode RISET=1K,VBAT=3.6V IBAT 1500 mA RISET=0.5K,VBAT=3.6V 3000 mA Current Mode (CC) VISET 1.45 1.5 1.55 V Trickle Charge Voltage Threshold VBAT rising VTRIKL 2.8 2.9 3.0 V Trickle Charge Voltage Threshold Hysteresis VTRIKL_HYS 200 mV Charge Current in Trickle charge Condition VBAT＜1.4V ITRIKL 15 mA 1.4V＜VBAT＜VTRIKL, RISET=1K 200 mA 1.4V＜VBAT＜VTRIKL, RISET=0.5K 400 mA End of Charger Current 13.3 %ICC Adapter Current Limit VILIM 1.9 2 2.1 V Current Limit through VBUS RILIMIT=1K ILIMIT 1.1 A RILIMIT=0.5K 2.2 A Switch Frequency VBUS=5V,VBAT=3.6V, RISET=0.5K 1.2 MHz Trickle Charge Timer Default register, wake-up mode 90 min Charge Timer Default register, CC+CV mode 10 h Recharge Threshold VBAT falling 150 mV STAT Low Level Open drain pulled up with 5mA STAT 0.2 V Leakage Current to STAT VBAT=4.3V, IBAT=0 0.6 1 μA FULL Low Level Open drain pulled up with 5mA FULL 0.2 V Leakage Current to FULL VBAT=4.3V, IBAT=0 0.6 1 μA CE Threshold Enable charge, CE rising VCER 3.5 V Disable charge, CE falling VCEF 2 V Temperature Sense Comparators High Voltage Threshold Temp fault at VNTC>VLTF VLTF 2.45 2.500 2.55 V Low Voltage Threshold Temp fault at VNTC<VHTF VHTF 0.48 0.500 0.52 V Temperature Sense Current Sense RNTC=10k INTC 94 100 106 μA Charging Temperature Shutdown Temperature rising 145 ℃ Hysteresis falling 25 ℃ |
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