CDBJFSC8650-G datasheet(2/3 Pages) COMCHIP

номер детали	CDBJFSC8650-G

подробное описание детали	Silicon Carbide Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMCHIP [Comchip Technology]

домашняя страница	http://www.comchiptech.com

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2 / 3 page

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Typ

Max

Unit

Typical Characteristics (

)

CDBJFSC8650-G

Page 2

Total capacitance

Total capacitive charge

Forward voltage

VR = 0V , TJ = 25°C , f = 1 MHZ

µA

VR = 400V , TJ = 150°C

1.7

100

IF = 8 A , TJ = 25°C

IF = 8 A , TJ = 175°C

VR = 650V , TJ = 25°C

VR = 650V , TJ = 175°C

VR = 200V , TJ = 25°C , f = 1 MHZ

1.45

Reverse Voltage, VR (V)

Fig.4 - Capacitance vs. Reverse Voltage

100

200

250

600

400

0.01

0.1

100

1000

Reverse current

QC = ∫

C(V) dv

VR = 400V , TJ = 25°C , f = 1 MHZ

1.75

56.5

560

QW-BSC12

REV:A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Fig.2 - Reverse Characteristics

150

300

350

450

Reverse Voltage, VR (V)

0.04

0.09

200

400

800

0.05

0.07

100

300

600

500

700

0.01

0.06

0.08

0.02

Case Tempature, TC (°C)

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

2.0

1.6

2.4

0.4

1.2

0.8

Fig.3 - Current Derating

TJ=75°C

TJ=25°C

0.03

TJ=175°C

TJ=125°C

TJ=25°C

TJ=75°C

500

550

150

175

125

100

10% Duty

30% Duty

50% Duty

70% Duty

D.C.

Silicon Carbide Power Schottky Diode

TJ=125°C

TJ=25°C

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