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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MJD350 датащи(PDF) 4 Page - Diodes Incorporated |
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MJD350 датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  MJD350 Document number: DS31608 Rev. 3 - 2 4 of 7 www.diodes.com January 2018 © Diodes Incorporated MJD350 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Emitter Breakdown Voltage (Note 7) BVCEO -300 V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -7 V IC = -100μA, IE = 0 Collector Cut-off Current ICBO -100 nA VCB = -300V, IE = 0 Emitter Cut-off Current IEBO -100 nA VEB = -5.6V, IC = 0 Collector-Emitter Saturation Voltage (Note 7) VCE(SAT) -0.5 V IC = -100mA, IB = -10mA Base-Emitter Saturation Voltage (Note 7) VBE(SAT) -1.0 V IC = -100mA, IB = -10mA Base-Emitter Turn-On Voltage (Note 7) VBE(ON) -1.0 V IC = -100mA, VCE = -5V DC Current Gain (Note 7) hFE 30 240 VCE = -10V, IC = -50mA Current Gain-Bandwidth Product fT 10 MHz IC = -50mA, VCE = -10V, f = 10MHz Note: 7. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%. |
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