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IPD60R280P7 датащи(PDF) 3 Page - Infineon Technologies AG

номер детали IPD60R280P7
подробное описание детали  600V CoolMOS짧 P7 Power Transistor
PDF  14 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD60R280P7 датащи(HTML) 3 Page - Infineon Technologies AG

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600VCoolMOSªP7PowerTransistor
IPD60R280P7
Rev.2.1,2018-03-02
Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Continuous drain current
1)
ID
-
-
-
-
12
8
A
TC=25°C
TC=100°C
Pulsed drain current
2)
ID,pulse
-
-
36
A
TC=25°C
Avalanche energy, single pulse
EAS
-
-
38
mJ
ID=2.7A; VDD=50V; see table 10
Avalanche energy, repetitive
EAR
-
-
0.19
mJ
ID=2.7A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
2.7
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
80
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
53
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
-
Ncm
-
Continuous diode forward current
IS
-
-
12
A
TC=25°C
Diode pulse current
2)
IS,pulse
-
-
36
A
TC=25°C
Reverse diode dv/dt
3)
dv/dt
-
-
50
V/ns
VDS=0...400V,ISD<=12A,Tj=25°C
see table 8
Maximum diode commutation speed
diF/dt
-
-
900
A/
µs VDS=0...400V,ISD<=12A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG



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