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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IPB60R080P7 датащи(PDF) 5 Page - Infineon Technologies AG |
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IPB60R080P7 датащи(HTML) 5 Page - Infineon Technologies AG |
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5 / 14 page  5 600VCoolMOSªP7PowerTransistor IPB60R080P7 Rev.2.0,2017-09-29 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.59mA Zero gate voltage drain current IDSS - - - 10 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 0.069 0.161 0.080 - Ω VGS=10V,ID=11.8A,Tj=25°C VGS=10V,ID=11.8A,Tj=150°C Gate resistance RG - 4.8 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2180 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 37 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 69 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) - 713 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 15 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3 Ω;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3 Ω;seetable9 Turn-off delay time td(off) - 70 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3 Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3 Ω;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 11 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate to drain charge Qgd - 16 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate charge total Qg - 51 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=11.8A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V |
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