 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
FD1600 датащи(PDF) 2 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
FD1600 датащи(HTML) 2 Page - Infineon Technologies AG |
|
|
2 / 12 page  2 TechnischeInformation/TechnicalInformation FD1600/1200R17HP4-K_B2 IGBT-Modul IGBT-Module preparedby:WB approvedby:IB dateofpublication:2016-01-21 revision:V3.1 IGBT-Chopper/IGBT-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = -40°C Tvj = 25°C Tvj = 150°C VCES 1570 1700 1700 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 1600 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 3200 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 10,5 kW Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 1600 A, VGE = 15 V IC = 1600 A, VGE = 15 V IC = 1600 A, VGE = 15 V VCE sat 1,90 2,30 2,40 2,25 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 64,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 17,0 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 0,97 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 130 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 4,20 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1570 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = ±15 V RGon = 1,1 Ω td on 0,40 0,43 0,45 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 1600 A, VCE = 900 V VGE = ±15 V RGon = 1,1 Ω tr 0,18 0,20 0,20 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = ±15 V RGoff = 0,6 Ω td off 1,05 1,20 1,20 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 1600 A, VCE = 900 V VGE = ±15 V RGoff = 0,6 Ω tf 0,30 0,46 0,51 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGon = 1,1 Ω Eon 380 500 535 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGoff = 0,6 Ω Eoff 420 570 600 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 7500 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 11,6 K/kW Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 15,0 K/kW TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
