M54585KP datasheet(2/4 Pages) POWEREX

2 / 4 page

Jan. 2000

ton

toff

50%

INPUT

OUTPUT

(1)Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

µs, tr = 6ns, tf = 6ns, Zo = 50Ω,

VI = 3.85V

(2)Input-output conditions : RL = 25

Ω, Vo = 10V

(3)Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

Ω

OUTPUT

INPUT

OPEN

Measured device

“H” input voltage

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54585KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75

°C)

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

—

240

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

Turn-on time

Turn-off time

ton

toff

CL = 15pF (note 1)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25

°C)

Parameter

—

Limits

min

typ

max

Symbol

Unit

—

Output voltage

“L” input voltage

Duty Cycle

≤ 10%

Duty Cycle

≤ 50%

Collector current

(Current per 1 cir-

cuit when 8 circuits

are coming on si-

multaneously)

VIH

200

0.6

VIL

≤ 400mA

≤ 200mA

3.85

3.4

—

2.4

1.6

1.8

2.4

100

—

ICEO = 100

µA

VI = 3.85V, IC = 400mA

VI = 3.4V, IC = 200mA

II = 3.85V

VI = 25V

IF = 400mA

VR = 50V

VCE = 4V, IC = 350mA, Ta = 25

°C

—

1.3

1.0

0.95

8.7

1.5

—

2500

—

1000

V (BR) CEO

Symbol

Unit

Parameter

Test conditions

Limits

min

typ+

max

Collector-emitter breakdown voltage

VCE(sat)

Collector-emitter saturation voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75

°C)

hFE

Input current

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

µA

—

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

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