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FZT657 датащи(PDF) 4 Page - Diodes Incorporated |
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FZT657 датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() FZT657 Document number: DS33152 Rev. 6 - 2 4 of 7 www.diodes.com April 2018 © Diodes Incorporated FZT657 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 300 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 12) BVCEO 300 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 7 — — V IE = 100µA Collector-Base Cut-Off Current ICBO — — 100 nA VCB = 200V Emitter Cut-Off Current IEBO — — 100 nA VEB = 5.6V DC Current Gain (Note 12) hFE 40 50 — — — — — IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V Collector-Emitter Saturation Voltage (Note 12) VCE(SAT) — — 0.5 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage (Note 12) VBE(SAT) — — 1.0 V IC = 100mA, IB = 10mA Base-Emitter Turn-On Voltage (Note 12) VBE(ON) — — 1.0 V IC = 100mA, VCE = 5V Output Capacitance COBO — — 20 pF VCB = 20V, f = 1MHz Current Gain-Bandwidth Product fT 30 — — MHz VCE = 20V, IC = 10mA, f = 20MHz Note: 12. Measured under pulse d conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
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