FZT653 datasheet(4/7 Pages) DIODES

4 / 7 page

FZT653

Document Number DS33150 Rev. 7 - 2

4 of 7

www.diodes.com

January 2018

FZT653

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

120



IC = 100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

100



IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO



IE = 100µA

Collector Cut-Off Current

ICBO



< 1



100

VCB = 100V



µA

VCB = 100V, TA = +125°C

Emitter Cut-Off Current

IEBO



< 1

100

VEB = 5.6V

Collector-Emitter Saturation Voltage (Note 11)

VCE(SAT)



0.13



0.3

IC = 1A, IB = 100mA



0.23

0.5

IC = 2A, IB = 200mA

Base-Emitter Saturation Voltage (Note 11)

VBE(SAT)



0.9

1.25

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 11)

VBE(ON)



0.8

1.0

IC = 1A, VCE = 2V

DC Current Gain (Note 11)

hFE

200



IC = 50mA, VCE = 2V

100

200

300

IC = 500mA, VCE = 2V

110



IC = 1A, VCE = 2V



IC = 2A, VCE = 2V

Current Gain-Bandwidth Product

140

175



MHz

VCE = 5V, IC = 100mA,

f = 100MHz

Switching Times

tON





IC = 500mA, VCC = 10V,

IB1 = -IB2 = 50mA

tOFF



1200



Output Capacitance

COBO



VCB = 10V, f = 1MHz

Note:

11.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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