FMMT458 datasheet(4/7 Pages) DIODES

4 / 7 page

FMMT458

Document number: DS33088 Rev. 7 - 2

4 of 7

www.diodes.com

October 2016

FMMT458

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

400

—

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

400

—

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cutoff Current

ICBO

—

100

VCB = 320V

Emitter Cutoff Current

IEBO

—

100

VEB = 5.6V

Collector Emitter Cutoff Current

ICES

—

100

VCE = 320V

Static Forward Current Transfer Ratio (Note 9)

hFE

100

—

300

—

IC = 1mA, VCE = 10V

IC = 50mA, VCE = 10V

IC = 100mA, VCE = 10V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

200

500

IC = 20mA, IB = 2mA

IC = 50mA, IB = 6mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

0.9

IC = 50mA, VCE = 10V

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

0.9

IC = 50mA, IB = 5mA

Output Capacitance

COBO

—

VCB = 20V, f = 1MHz

Transition Frequency

—

MHz

VCE = 20V, IC = 10mA,

f = 20MHz

Turn-On Time

tON

—

135

—

VCE = 100V, IC = 50mA

IB1 = 5mA, IB2 = -10mA

Turn-Off Time

tOFF

—

2260

—

Note:

9. Measured under pulsed conditions. Pulse width

 300µs. Duty cycle  2%.

FMMT458 датащи(PDF) 4 Page - Diodes Incorporated

FMMT458 датащи(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL