SIP32104 datasheet(2/8 Pages) VISHAY

2 / 8 page

SiP32104

www.vishay.com

Vishay Siliconix

S17-0469-Rev. B, 03-Apr-17

Document Number: 78609

For technical questions, contact: powerictechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Negative current injection up to 300 mA

b. All bumps soldered to 1" x 1", 2 oz. copper, 4 layers PC board

c. Derate 13.7 mW/°C above TA = 70 °C



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating/conditions for extended periods may affect device reliability.

Notes

a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum

b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing

c. For VIN outside this range consult typical EN, EN threshold curve

ABSOLUTE MAXIMUM RATINGS

PARAMETER

CONDITIONS

LIMIT

UNIT

VPA, VPB

Reference to GND

-0.3 to +6

Pulse at 1 ms reference to GND a

-1.6

VEN

Reference to GND

-0.3 to +6

Maximum continuous switch current

Maximum pulse current

100 μs pulse

ESD (HBM)

8000

Operating temperature

-40 to +85

°C

Operating junction temperature

125

Storage temperature

-65 to +150

Thermal resistance (



JA)

°C/W

Power dissipation (PD) b, c

TA = 70 °C

1096

SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS UNLESS SPECIFIED

LIMITS

UNIT

VIN = VPA/VPB = 2.3 V to 5.5 V, TA = -40 °C to +85 °C

(Typical values are at VPA, VPB = 4.2 V,

CPA, CPB = 0.1 μF, TA = 25 °C)

MIN. a

TYP. b

MAX. a

Power Supply

Operating voltage c

VPA/PB

2.3

5.5

Quiescent current

VEN = 0 V, no load

110

400

Shutdown current

ISHDN

VEN = VIN, no load

110

400

Internal FET

On-resistance

RDS(on)

VPA/VPB = 2.3 V, IL = 500 mA, TA = 25 °C



VPA/VPB = 3.3 V, IL = 500 mA, TA = 25 °C

6.5

Control

EN Input logic-low voltage c

VIL

0.4

EN Input logic-high voltage c

VIH

1.4

EN Input logic hysteresis

VI(HYS)

> 200

Timing

Output turn-on delay time

td(on)

VIN = 4.2 V, RL = 100 , CL = 0.1 μF, TA = 25 °C

-0.8

Output turn-on rise time

-1

Output turn-off delay time

td(off)

-0.12-

Output turn-off fall time

-0.1

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