2N697 datasheet(1/3 Pages) MICROSEMI

номер детали	2N697

подробное описание детали	NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR

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производитель	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/99

Devices

Qualified Level

2N696

2N696S

2N697

2N697S

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Total Power Dissipation @ TA = 25

0C (1)

@ TC = 25

0C (2)

PT

0.6

2.0

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

0.075

0C/mW

1) Derate linearly 4.0 mW/

0C for TA > 250C

2) Derate linearly 13.3 mW/

0C for TC > 250C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

RBE = 10 Ω, IC = 100 mAdc

V(BR)CER

40

Vdc

Collector-Base Cutoff Current

VCB = 100 Vdc

VCB = 30 Vdc

ICBO

10

0.1

µAdc

Emitter-Base Cutoff Current

VEB = 7.0 Vdc

IEBO

10

µAdc

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

IC = 150 mAdc, VCE = 10 Vdc

2N696,s

2N697,s

IC = 500 mAdc, VCE = 10 Vdc

2N696,s

2N697,s

hFE

20

40

12.5

20.0

60

120

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

VCE(sat)

0.3

1.5

Vdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

VBE(sat)

1.3

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

TO-5*

JAN

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