IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY03N90PHV

IXTP03N90P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

85

140

mS

C

iss

80.0

pF

C

oss

V

6.3

pF

C

rss

1.7

pF

t

d(on)

7

ns

t

r

20

ns

t

d(off)

26

ns

t

f

38

ns

Q

g(on)

4.0

nC

Q

gs

V

0.4

nC

Q

gd

2.4

nC

R

thJC

4.4

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

0.3

A

I

SM

Repetitive, pulse Width Limited by T

JM

1.2

A

V

SD

I

1.4

V

t

rr

280

ns

Q

RM

0.9

μC

I

RM

6.5

A

I

V

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source









































































































1 - Gate

2 - Source

3 - Drain

TO-252HV Outline