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APM9933 датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM9933
подробное описание детали  Dual P-Channel Enhancement Mode MOSFET
PDF  9 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM9933 датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright
 ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
www.anpec.com.tw
2
APM9933
APM9933
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS=0V , IDS=-250µA
-20
V
∆BV
DSS
∆T
j
Breakdown Voltage
Temperature Coefficient
I
D=-250µA, Referenced to 25°C
-16
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS=-16V , VGS=0V
-1
µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=-250µA
-0.5
-0.7
-1
V
I
GSS
Gate Leakage Current
V
GS=±12V , VDS=0V
±100
nA
∆V
GS(th)
∆T
j
Gate Threshold Voltage
Temperature Coefficient
I
D=-250µA, Referenced to 25°C
2.5
mV/°C
V
GS=-4.5V , IDS=-3.4A
45
70
V
GS=-3.0V , IDS=-2.9A
52
80
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=-2.7V , IDS=-2.6A
60
100
m
Ω
I
D(on)
On-State Drain Current
V
GS=-4.5V , VDS=-5.0V
-10
A
g
FS
Forward Transconductance
V
DS=-4.5V , ID=-3.8A
10
S
V
SD
a
Diode Forward Voltage
I
SD=-2.0A , VGS=0V
-0.7
-1.3
V
Dynamic
b
Q
g
Total Gate Charge
12.7
15
Q
gs
Gate-Source Charge
1.75
Q
gd
Gate-Drain Charge
V
DS=-6V , IDS=-3.5A
V
GS=-4.5V
2.8
nC
t
d(ON)
Turn-on Delay Time
12
21
T
r
Turn-on Rise Time
25
42
t
d(OFF)
Turn-off Delay Time
52
85
T
f
Turn-off Fall Time
V
DD=-6V , IDS=-1A ,
V
GEN=-4.5V , RG=6Ω ,
R
L=6Ω
18
32
ns
C
iss
Input Capacitance
1290
C
oss
Output Capacitance
300
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=-15V
Frequency=1.0MHz
210
pF
Notes
a : Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Absolute Maximum Ratings (Cont.) (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
T
A=25°C
2.5
P
D
Maximum Power Dissipation
T
A=100°C
1.0
W
T
J
Maximum Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
RθjA
Thermal Resistance – Junction to Ambient
50
°C/W
Electrical Characteristics (T
A = 25°C unless otherwise noted)



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