IXTH1N250 datasheet(1/5 Pages) IXYS

номер детали	IXTH1N250

подробное описание детали	N-Channel Enhancement Mode Fast Intrinsic Diode

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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DS99761C(04/12)

High Voltage

Power MOSFET

Features

International Standard Package

Molding Epoxies Weet UL 94 V-0

Flammability Classification

Fast Intrinsic Diode

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

IXTH1N250

V

DSS

= 2500V

I

D25

= 1.5A

R

DS(on) ≤

≤≤≤≤ 40

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

2500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

2500

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

1.5

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

6A

P

D

T

C = 25°C

250

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) From Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

2500

V

GS(th)

V

DS = VGS, ID = 250μA

2.0

4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = 0.8 • VDSS, VGS = 0V

25

μA

T

J = 125°C

25

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

40

Ω

N-Channel Enhancement Mode

Fast Intrinsic Diode

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247

G

S

D

Tab

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