IRF9620 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91082

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-3.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 200

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = - 1 mA

- 0.22

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 2.0

- 4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

- 100

μA

VDS = - 160 V, VGS = 0 V, TJ = 125 °C

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 1.5 Ab

1.5



Forward Transconductance

gfs

VDS = - 50 V, ID = - 1.5 Ab

1.0

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

350

Output Capacitance

Coss

100

Reverse Transfer Capacitance

Crss

-30

Total Gate Charge

VGS = - 10 V

ID = - 4.0 A, VDS = - 160 V,

see fig. 11 and 18b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = - 100 V, ID = - 1.5 A,

Rg = 50 , RD = 67, see fig. 17b

-15

Rise Time

-25

Turn-Off Delay Time

td(off)

-20

Fall Time

-15

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

- 3.5

Pulsed Diode Forward Currenta

ISM

- 14

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 3.5 A, VGS = 0 Vb

- 7.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μsb

300

450

Body Diode Reverse Recovery Charge

Qrr

-1.9

2.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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