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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TLWB датащи(PDF) 4 Page - Vishay Siliconix |
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TLWB датащи(HTML) 4 Page - Vishay Siliconix |
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4 / 14 page  www.vishay.com 4 Document Number 83144 Rev. 1.8, 14-Jan-05 TLWB / BG / O / R / TG / W / Y7900 Vishay Semiconductors Blue green TLWBG7900 Blue TLWB7900 White TLWW7900 Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 50 mA, RthJA = 200 °K/W φ V 400 700 1250 mlm Luminous intensity/Total flux IF = 50 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Dominant wavelength IF = 50 mA, RthJA = 200 °K/W λ d 492 505 510 nm Peak wavelength IF = 50 mA, RthJA = 200 °K/W λ p 503 nm Angle of half intensity IF = 50 mA, RthJA = 200 °K/W ϕ ± 45 deg Total included angle 90 % of Total Flux Captured ϕ 100 deg Forward voltage IF = 50 mA, RthJA = 200 °K/W VF 4.2 4.7 V Reverse voltage IR = 10 µAVR 510 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Temperature coefficient of λ dom IF = 30 mA TC λ dom 0.02 nm/K Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 50 mA, RthJA = 200 °K/W φ V 200 330 630 mlm Luminous intensity/Total flux IF = 50 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Dominant wavelength IF = 50 mA, RthJA = 200 °K/W λ d 462 470 476 nm Peak wavelength IF = 50 mA, RthJA = 200 °K/W λ p 460 nm Angle of half intensity IF = 50 mA, RthJA = 200 °K/W ϕ ± 45 deg Total included angle 90 % of Total Flux Captured ϕ 100 deg Forward voltage IF = 50 mA, RthJA = 200 °K/W VF 4.3 4.7 V Reverse voltage IR = 10 µAVR 510 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Temperature coefficient of λ dom IF = 30 mA TC λ dom 0.03 nm/K Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 50 mA, RthJA = 200 °K/W φ V 400 650 1250 mlm Luminous intensity/Total flux IF = 50 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Color temperature IF = 50 mA, RthJA = 200 °K/W TK 5500 K Angle of half intensity IF = 50 mA, RthJA = 200 °K/W ϕ ± 45 deg Total included angle 90 % of Total Flux Captured ϕ 100 deg Forward voltage IF = 50 mA, RthJA = 200 °K/W VF 4.3 5.1 V Reverse voltage IR = 10 µAVR 510 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF |
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