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PESD1CAN датащи(PDF) 2 Page - NXP Semiconductors |
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PESD1CAN датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 9397 750 14197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Objective data sheet Rev. 01 — 25 January 2005 2 of 12 Philips Semiconductors PESD1CAN CAN bus ESD protection diode in SOT23 2. Pinning information 3. Ordering information 4. Marking [1] * = p: made in Hong Kong * = t: made in Hong Kong * = W: made in China 5. Limiting values [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measured from pin 1 to 3 or 2 to 3. Table 2: Pinning Pin Description Simplified outline Symbol 1 cathode 1 2 cathode 2 3 double cathode SOT23 12 3 2 1 006aaa155 3 Table 3: Ordering information Type number Package Name Description Version PESD1CAN - plastic surface mounted package; 3 leads SOT23 Table 4: Marking codes Type number Marking code [1] PESD1CAN *AN Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ppp peak pulse power 8/20 µs [1] [2] - 200 W Ipp peak pulse current 8/20 µs [1] [2] -3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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