IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT12N150

IXTH12N150

IXYS REF: T_12N150 (8M) 5-23-11

Fig. 7. Transconductance

0

2

4

6

8

10

12

14

16

18

20

22

02

4

6

8

10

12

14

125ºC

25ºC

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0

5

10

15

20

25

30

35

40

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Fig. 9. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

1020

304050607080

90

100

110

Fig. 10. Capacitance

10

100

1,000

10,000

0

5

10

15

20

25

30

35

40

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds

Fig. 11. Forward-Bias Safe Operating Area

0.1

1

10

100

10

100

1,000

10,000

Single Pulse

100µs

1ms

25µs

10ms

DC